savantic semiconductor product specification silicon pnp power transistors 2SB1023 d escription with to-220fa package high dc current gain low saturation voltage complement to type 2sd1413 applications power amplifier and switching applications hammer drive,pulse motor drive applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector -emitter voltage open base -40 v v ebo emitter-base voltage open collector -5 v i c collector current -3 a i b base current -0.5 a p c collector power dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1023 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-25ma; i b =0 -40 v v cesat collector-emitter saturation voltage i c =-2a ;i b =-4ma -1.5 v v besat base-emitter saturation voltage i c =-2a ;i b =-4ma -2.0 v i cbo collector cut-off current v cb =-60v; i e =0 -20 a i ebo emitter cut-off current v eb =-5v; i c =0 -2.5 ma h fe-1 dc current gain i c =-1a ; v ce =-2v 2000 h fe-2 dc current gain i c =-3a ; v ce =-2v 1000 switching times t on turn-on time 0.30 s t stg storage time 0.60 s t f fall time i b1 =-i b2 =-6ma v cc =-30v ,r l =10 < 0.25 s
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1023 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
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